Samsung has announced that it will begin mass production of super-fast Universal Flash Storage (UFS) 4.0 memory later this year.
The technology giant said its UFS 4.0 memory is the “highest performance” UFS 4.0 memory in the industry and is based on Samsung’s 7th generation V-NAND.
Samsung’s UFS 4.0 modules are packaged with a maximum size of 11 mm x 13 mm x 1 mm and will be available in several capacities up to 1TB. Mass production is expected to begin in the third quarter of 2022.
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UFS 4.0 promises sequential read speeds of up to 4200MB / s and sequential write speeds of up to 2800MB / s – approximately twice the speeds of UFS 3.1, published in January 2020.
The board of the UFS JEDEC specification body has approved the implementation of Samsung’s UFS 4.0, according to Samsung, which will sell UFS 4.0 memory to the mobile industry when it switches to 5G. JEDEC has not yet published the UFS 4.0 specification.
“UFS 4.0 offers speeds of up to 23.2 Gbps per band, twice the speed of the previous UFS 3.1. This high bandwidth is ideal for 5G smartphones that require huge amounts of data processing, and is also expected to be adopted in future automotive applications, AR as well as VR, “Samsung said in a thread on Twitter.
The phone’s battery life can also be extended with the new specification. Samsung UFS 4.0 memory is 46% more efficient than UFS 3.1 in test conditions, with a sequential read speed of up to 6.0 MB / s per milliampere (mA).
Samsung UFS 4.0 will include an “advanced” Replay Protected Memory Block (RPMB), a protocol for eMMC, UFS and NVMe Flash memory on mobile devices, which aims to protect against attacks when replaying applications such as digital wallets. RPMB protects memory partitions by requiring authentication for read and write actions. RPMB’s UFS 4.0 design is 1.8 times more efficient at keeping secrets, according to Samsung.
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